Methods and structures for altering strain in iii-nitride materials
AssigneeSoitec
InventorChantal ARENA
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Abstract
Methods and structures for producing semiconductor materials, substrates and devices with improved characteristics are disclosed. Structures and methods for forming reduced strain structures include forming an interface between a support structure surface and a strained semiconductor layer. The support structure is selectively etched to form a plurality of semiconductor islands with reduced levels of strain.
Claims23
A method for forming a semiconductor structure, comprising:
- forming a bonding interface between a bonding surface of a strained semiconductor layer and a bonding surface of a support structure;
- and
- selectively etching the semiconductor layer and the bonding surface of the support structure thereby exposing adjoining areas of the bonding surface of the semiconductor layer, whereby exposing adjoining areas of the bonding surface of the semiconductor layer produces a plurality of semiconductor islands with reduced levels of strain.
A method for reducing strain in III-nitride structures comprising:
- bonding a strained III-nitride layer to a support structure;
- selectively etching the strained III-nitride layer to expose the support structure;
- selectively laterally etching the support structure;
- and
- forming a continuous III-nitride layer with reduced levels of strain by performing lateral growth from unetched portions of the III-nitride layer.
A semiconductor structure comprising:
- a III-nitride island with reduced levels of strain;
- a free surface of the III-nitride island;
- a support structure comprising one or more elements including a base material, an etch stop layer and a sacrificial layer;
- and
- a bonding interface between a bonding surface of the III-nitride island opposed to the free surface and a bonding surface of the support structure,
- wherein the surface area of the bonding surface of the III-nitride island is greater than the surface area of the bonding surface of the support structure.
A further semiconductor structure comprising a plurality of semiconductor structures including:
- a III-nitride island with reduced levels of strain;
- a free surface of the III-nitride island;
- a support structure comprising one or more elements including a base material, an etch stop layer and a sacrificial layer;
- and
- a bonding interface between a bonding surface of the III-nitride island opposed to the free surface and a bonding surface of the support structure,
- wherein the surface area of the bonding surface of the III-nitride island is greater than the surface area of the bonding surface of the support structure, wherein the free surfaces of the III-nitride islands are substantially within the same horizontal plane and are separated at their periphery by a distance of less than 30 μm.
Dependencies are inferred from the claim text.