Effective efuse structure

An electrically programmable fuse (eFuse) comprising:

• a semiconductor layer;
• a silicide layer overlying the semiconductor layer;
• a first contact structure electrically coupled to the silicide layer;
• a second contact structure electrically coupled to the silicide layer, wherein the first contact structure functions as an anode and the second contact structure functions as a cathode;
• and
• a back-gate structure disposed underneath the semiconductor layer in a back-gate structure region proximate the second contact structure, the back-gate structure region excluding a region proximate the first contact structure,
• wherein the back-gate structure comprises one selected from the group consisting of (a) a gate dielectric layer overlying a conductor, (b) a gate dielectric layer overlying at least a portion of a resistor, and (c) a portion of a CMOS transistor, and
• further wherein responsive to (i) a programming voltage potential supplied between the first and second contact structures and (ii) a voltage potential supplied to the back-gate structure, silicide of the silicide layer operates to migrate, with an enhanced migration, into the semiconductor layer from the cathode to the anode with an absence of silicide residue in at least the back-gate structure region of the semiconductor layer between the first and second contact structures.

A method for implementing an electrically programmable fuse (eFuse) comprising:

• forming a back-gate structure within an insulative layer;
• forming a semiconductor layer overlying the back-gate structure;
• forming a silicide layer overlying the semiconductor layer;
• forming a first contact structure electrically coupled to the silicide layer;
• and
• forming a second contact structure electrically coupled to the silicide layer, wherein the first contact structure functions as an anode and the second contact structure functions as a cathode, and wherein the back-gate structure is disposed underneath the semiconductor layer in a back-gate structure region proximate the second contact structure, the back-gate structure region excluding a region proximate the first contact structure.