Back to results
US 2010/0072568 A1Published application
Image Sensor and Method of Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorSeung Ryong PARK
Life of this patent
Estimating the term…
Abstract
An image sensor and a method of manufacturing the same are disclosed. The image sensor includes a plurality of photodiodes on a substrate, an dielectric layer on the plurality of the photodiodes, a metal line layer in the dielectric layer corresponding to a border region between neighboring photodiodes, the metal line layer having a curved backside, a color filter layer on the dielectric layer, and a microlens on the color filter layer.
Claims16
An image sensor comprising:
- a plurality of photodiodes on or in a substrate;
- an dielectric layer formed on the plurality of the photodiodes;
- a metal line layer in or on the dielectric layer corresponding to a border region between neighboring photodiodes, the metal line layer comprising a backside having a curved structure;
- a color filter layer on the dielectric layer;
- and
- a microlens on the color filter layer.
3 more elements
A method of manufacturing an image sensor comprising:
- forming a plurality of photodiodes on or in a substrate;
- forming a first dielectric layer corresponding to each of the plurality of the photodiodes, the first dielectric layer having a convex lens shape;
- forming a first metal line layer on the first dielectric layer, the first metal line layer having a concave backside, over a border region between neighboring photodiodes;
- and
- forming a second dielectric layer on the first dielectric layer and the first metal line layer.
2 more elements
Dependencies are inferred from the claim text.