METAL GATE STRESS FILM FOR MOBILITY ENHANCEMENT IN FinFET DEVICE
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJeff J. XU, Clement H. Wann, Chih Chieh Yeh, Chih-Sheng Chang
Life of this patent
Estimating the term…
Abstract
A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
Claims20
A method for forming a CMOS FinFET device comprising:
- forming a plurality of NMOS and PMOS regions on a substrate;
- forming a compressive PVD (physical vapor deposition) metal layer over said NMOS and PMOS regions;
- selectively converting said compressive PVD metal layer formed in said PMOS region, to a tensile metal layer;
- and
- forming gate electrodes overlying said compressive PVD metal layer in said NMOS region and overlying said tensile metal layer in said PMOS region.
A method for forming a CMOS FinFET device comprising:
- forming semiconductor fins in NMOS and PMOS regions over a substrate;
- forming dummy gates overlying a sacrificial film overlying said semiconductor fins in each of said NMOS and PMOS regions;
- performing a source/drain implant in at least one of said NMOS and PMOS regions;
- depositing a dielectric over said semiconductor fins and said dummy gates;
- planarizing said dielectric to expose surfaces of said dummy gates in each of said NMOS and PMOS regions;
- selectively removing said dummy gates from said PMOS region;
- depositing a high-k gate dielectric on said semiconductor fins in said PMOS region;
- using physical vapor deposition techniques to deposit a first compressive metal film on said fins in said PMOS region;
- heating thereby converting said first compressive metal film to a tensile metal film;
- and
- forming functional gates over said semiconductor fins in said PMOS region.
A CMOS FinFET device comprising:
- an NMOS portion having semiconductor fins and an NMOS gate disposed over and alongside said semiconductor fins and a first high-k dielectric and a compressive metal film disposed between said semiconductor fins and said NMOS gate;
- and
- a PMOS portion having semiconductor fins and a PMOS gate disposed over and alongside said semiconductor fins and a second high-k dielectric and a tensile metal film disposed between said semiconductor fins and said PMOS gate.
Dependencies are inferred from the claim text.