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US 2010/0072552 A1Published application
Field effect transistor for preventing collapse or deformation of active regions
AssigneeElpida Memory, Inc.
InventorsHideo SUNAMI, Atsushi Sugimura, Kiyoshi Okuyama, Kiyonori Oyu, Hideharu Miyake
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Abstract
A field effect transistor includes an active region provided in a projecting part on a surface of a semiconductor substrate, the projecting part extending in a fixed direction parallel to the surface, and a gate electrode provided on a sidewall of the projecting part along the fixed direction with a gate insulating films interposed.
Claims10
A field effect transistor comprising:
- an active region provided on a projecting part on a surface of a semiconductor substrate, said projecting part extending in a fixed direction parallel to said surface;
- and
- a gate electrode that is provided on a sidewall of said projecting part along said fixed direction with a gate insulating film interposed.
A fabrication method of a field effect transistor comprising:
- on a surface of a semiconductor substrate, forming by said semiconductor substrate a projecting part that extends in a fixed direction that is parallel to said surface;
- selectively oxidizing said projecting part to form active regions at remaining sites;
- forming gate insulating films on side-walls of said projecting part;
- forming gate electrodes that contact said gate insulation films along said fixed direction;
- and
- forming diffusion layers for source electrodes and drain electrodes on an upper portion of said active region and in the vicinity of said surface of said semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.