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US 2010/0072550 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKouji Matsuo
Life of this patent
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Abstract
A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.
Claims8
A semiconductor device, comprising:
- plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate;
- and
- a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.
8-18. (canceled)
Dependencies are inferred from the claim text.