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US 2010/0072522 A1Published application
Semiconductor device and fabrication method thereof
AssigneeFujitsu Microelectronics Limited
InventorsKazuo HASHIMI, Hidezaku SATO
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Abstract
A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.
Claims9
A semiconductor device fabrication method comprising the steps of:
- forming a dielectric film on a semiconductor substrate;
- forming a conductive film on the dielectric film;
- patterning the conductive film to form an electrode by a dry process;
- and
- removing at least a portion of a damaged layer produced in the semiconductor substrate due to the dry process, after removing at least a part of the dielectric film, using thermally decomposed atomic hydrogen under a prescribed temperature condition.
2 more elements
A semiconductor device fabrication method comprising the steps of:
- forming a gate electrode on a semiconductor substrate via a dielectric film;
- forming a sidewall for the gate electrode by dry etching;
- and
- removing a damaged layer produced in the semiconductor substrate due to the dry etching, using thermally decomposed atomic hydrogen under a prescribed temperature condition.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode formed on the semiconductor substrate via a dielectric film;
- a sidewall for the gate electrode;
- and
- an impurity diffused region formed in the semiconductor substrate on both sides of the gate electrode;
- wherein the bottom of the side wall has a first inverted trapezoidal cross-sectional profile, and the surface area of the impurity diffused region extending outside the side wall has a second inverted trapezoidal cross-sectional profile.
3 more elements
Dependencies are inferred from the claim text.