Semiconductor device and semiconductor manufacturing method

A semiconductor device comprising:

• a first SiC layer having a first polar face;
• an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;
• and
• a first group III nitride layer or group II oxide layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

A semiconductor device comprising:

• a first SiC layer having a first polar face;
• an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;
• a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face;
• and
• a first group III nitride layer or group II oxide layer deposited on the second SiC layer and having a polar face identical to the second polar face.

A waveguide-type quasi-phase matched wavelength conversion element comprising:

• a first optical waveguide structure formed on a first SiC layer having a first polar face and comprised of a first group III nitride or a group II oxide having a polar face identical to the first polar face;
• and
• a second optical waveguide structure comprised of a second group III nitride or group II oxide, formed by being deposited, through an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer, on the intermediate layer and having a polar face opposite to the first polar face;
• wherein the first optical waveguide structure and the second optical waveguide structure are spatially arranged and the optical waveguides of both the first and second optical waveguide structures are connected to each other.

A semiconductor device comprising:

• a first SiC layer having a first polar face;
• an intermediate layer formed by being deposited on the first SiC layer and comprised of an SixGe1−x layer;
• and
• a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

A semiconductor substrate comprising:

• a first SiC layer having a first polar face;
• an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;
• and
• a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

A semiconductor substrate comprising:

• a first SiC layer having a first polar face;
• an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;
• and
• a first group III nitride layer or group II oxide layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

A semiconductor substrate comprising:

• a first SiC layer having a first polar face;
• an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;
• a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face;
• and
• a first group III nitride layer or group II oxide layer formed by being deposited on the second SiC layer and having a polar face identical to the second polar face.