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US 2010/0072484 A1Published application
Heteroepitaxial gallium nitride-based device formed on an off-cut substrate
AssigneeTriQuint Semiconductor, Inc.
InventorsJose Jimenez, Uttiya Chowdhury
Life of this patent
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Abstract
Embodiments include but are not limited to apparatuses and systems including a heteroepitaxial gallium nitride-based device formed on an off-cut substrate, and methods for making the same. Other embodiments may be described and claimed.
Claims19
An apparatus comprising:
- an off-cut substrate;
- and
- a heteroepitaxial gallium nitride (GaN)-based device formed on the off-cut substrate.
A method comprising:
- providing an off-cut substrate;
- and
- forming a heteroepitaxial gallium nitride (GaN)-based device on the off-cut substrate.
A system comprising:
- a power amplifier for amplifying a signal, the power amplifier comprising a heteroepitaxial gallium nitride (GaN)-HFET formed on an off-cut substrate;
- and
- an antenna operatively coupled to the microelectronic device to transmit the amplified signal.
Dependencies are inferred from the claim text.