Thin film transistor array panel and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJu-Han Bae, Kyu-Young Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorsJu-Han Bae, Kyu-Young Kim
Estimating the term…
A thin film transistor array panel according to the present invention includes: a gate line formed on a substrate and including a gate electrode; a gate insulating layer formed on the gate electrode; a mold layer formed on the gate insulating layer and having an opening overlapping the gate electrode; a semiconductor layer filled in the opening; a data line formed on the mold layer and including a source electrode contacted with the semiconductor layer; a drain electrode contacted with the semiconductor layer on the mold layer and facing the source electrode; a passivation layer formed on the data line and the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode, wherein the passivation layer, the source electrode, and the drain electrode have at least one through-hole connected to the opening.
A thin film transistor array panel comprising:
A method for manufacturing a thin film transistor array panel, comprising:
Dependencies are inferred from the claim text.