Device and method for managing radiation

A method of manufacturing a device for managing radiation, the method comprising:

• manufacturing a field effect transistor including a device channel, a first edge contact adjacent to a first edge of the device channel and a second edge contact adjacent to a second edge of the device channel, the manufacturing the field effect transistor including:
• determining a point on the device channel at which an amplitude of a fundamental frequency of a plasma wave induced in the device channel by the radiation is at or proximate to its maximum when the first edge and the second edge are electrically symmetrical;
• and
• forming at least one channel contact contacting the device channel at the point.

A method comprising:

• generating electrically symmetrical boundary conditions at a first edge and a second edge of a device channel of a field effect transistor;
• and
• managing the radiation using at least one of:
• a first edge contact to the device channel disposed adjacent to the first edge of the device channel, a second edge contact to the device channel disposed adjacent to the second edge of the device channel, a gate, or at least one channel contact, wherein the at least one channel contact contacts the device channel at a point at which an amplitude of a fundamental frequency of a plasma wave induced in the device channel by the radiation is at or proximate to its maximum when the first edge and the second edge have electrically symmetrical boundary conditions.