Mounting table and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsShinji HIMORI, Yasuharu Sasaki
Life of this patent
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Abstract
A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρv/(μπf))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.
Claims14
A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, comprising:
- a conductive member connected to a high frequency power supply for generating a plasma and a high frequency power supply for attracting ions;
- a dielectric layer embedded in a central portion on an upper surface of the conductive member;
- and
- an electrostatic chuck mounted on the dielectric layer, wherein the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying the following conditions:
- δ/z≧85, where δ=(ρv/(μπf))1/2 and,
- a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film, where z refers to a thickness of the electrode film;
- δ, to a skin depth of the electrode film with respect to high frequency power supplied from the high frequency power supply for generating a plasma;
- f, to a frequency of high frequency power supplied from the high frequency power supply for generating a plasma;
- π, to the circular constant;
- μ, to a permeability of the electrode film;
- and ρv, to a resistivity of the electrode film.
A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, comprising:
- a conductive member connected to a high frequency power supply for generating a plasma and a high frequency power supply for attracting ions;
- a dielectric layer embedded in a central portion on an upper surface of the conductive member;
- and
- an electrostatic chuck mounted on the dielectric layer, wherein the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions:
- 115Ω/□≦ρs and,
- a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film, where ρs:
- a surface resistivity of the electrode film.
A plasma processing apparatus having a mounting table on which a substrate is mounted, the mounting table comprising:
- a conductive member connected to a high frequency power supply for generating a plasma and a high frequency power supply for attracting ions;
- a dielectric layer embedded in a central portion on an upper surface of the conductive member;
- and
- an electrostatic chuck mounted on the dielectric layer, wherein the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying the following conditions:
- δ/z≧85, where δ=(ρv/(μπf))1/2 and,
- a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film, where z refers to a thickness of the electrode film;
- δ, to a skin depth of the electrode film with respect to high frequency power supplied from the high frequency power supply for generating a plasma;
- f, to a frequency of high frequency power supplied from the high frequency power supply for generating a plasma;
- π, to the circular constant;
- μ, to a permeability of the electrode film;
- and ρv, to a resistivity of the electrode film.
A plasma processing apparatus having a mounting table on which a substrate is mounted, the mounting table comprising:
- a conductive member connected to a high frequency power supply for generating a plasma and a high frequency power supply for attracting ions;
- a dielectric layer embedded in a central portion on an upper surface of the conductive member;
- and
- an electrostatic chuck mounted on the dielectric layer, wherein the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying the following conditions:
- 115Ω/□≦ρs and,
- a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film, where ρs:
- a surface resistivity of the electrode film.
Dependencies are inferred from the claim text.