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US 2010/0064274 A1Published application
Proximity correction method and system
AssigneeQimonda AG
InventorWolfgang Grimm
Life of this patent
Estimating the term…
Abstract
A proximity correction method includes creating a first proximity correction model having a focus value and creating a second proximity correction model having a first defocus value. One of the first or second proximity correction models are associated with corresponding first and second layout areas of a semiconductor wafer.
Claims22
A proximity correction method, comprising:
- creating a first proximity correction model having a focus value;
- creating a second proximity correction model having a first defocus value;
- and
- associating one of the first or second proximity correction models with corresponding first and second layout areas of a semiconductor wafer.
1 more element
The method of claim 7, wherein creating the topology map includes modeling a chemical mechanical polishing process.
A proximity correction system, comprising:
- a first proximity correction model having a focus value;
- a second proximity correction model a first defocus from the first proximity correction model;
- wherein the first and second proximity correction models are associated with corresponding layout areas of a semiconductor wafer.
A system, comprising:
- a light source;
- a photomask;
- a lens receiving light from the light source and adapted to project an image from the photomask to a semiconductor wafer;
- and
- an optical proximity correction module including:
- a first OPC model having a focus value;
- a second OPC model a first defocus from the first OPC model;
- wherein the first and second OPC models are associated with corresponding layout areas of the semiconductor wafer.
5 more elements
A proximity correction system, comprising:
- means for creating a first proximity correction model having a focus value;
- means for creating a second proximity correction model having a first defocus value;
- and
- means for associating one of the first or second proximity correction models to corresponding first and second layout areas of a semiconductor wafer.
1 more element
Dependencies are inferred from the claim text.