Two step method and apparatus for polishing metal and other films in semiconductor manufacturing

A wafer processing apparatus comprising:

• a first processing chamber comprising a wet chemical etching apparatus;
• a second processing chamber comprising a mechanical polishing apparatus that removes material from a semiconductor wafer seated on a chuck therein by relative motion between said chuck and a cutting member;
• a third processing chamber comprising a chemical mechanical polishing (CMP) apparatus;
• and
• a wafer transfer apparatus that transfers said semiconductor wafer from said first processing chamber to said third processing chamber and from said second processing chamber to said third processing chamber,
• wherein said first, second and third processing chambers and said wafer transfer apparatus are each internally disposed within a common housing of said wafer processing apparatus.

A method for processing a semiconductor wafer within a single apparatus comprising:

• providing a semiconductor wafer with a bulk material layer formed over a surface thereof;
• removing an upper portion of said bulk material layer from said semiconductor wafer using wet chemical etching or mechanical cutting in a first processing chamber of said apparatus;
• and
• thereafter, polishing in a second processing chamber of said apparatus thereby removing a remaining portion of said bulk material layer and exposing said surface, said polishing comprising chemical mechanical polishing (CMP).