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US 2010/0062613 A1Published application
Method of processing a substrate
AssigneeSamsung Electronics Co., Ltd.
InventorsYoon-jae Kim, Yong-jin Kim, Ken Tokashiki, Keun-hee Bai
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Abstract
A method of processing a substrate using plasma includes loading a substrate into a chamber, processing the substrate with a first plasma mode and then processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.
Claims18
A method of processing a substrate, the method comprising:
- loading a substrate in a chamber;
- processing the substrate with a first plasma mode;
- and then
- processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.
1 more element
A method of processing a substrate, the method comprising:
- loading a substrate in a chamber of a high-density plasma chemical vapor deposition apparatus;
- and
- depositing a material layer on the substrate using a plasma with a time-modulation mode,
- wherein the plasma in the time-modulation mode is obtained by periodically turning on and off the plasma induced in the chamber to reduce plasma-induced damage in the substrate.
1 more element
Dependencies are inferred from the claim text.