Back to results
US 2010/0062612 A1Published application
Aftertreatment Method for Amorphous Carbon Film
AssigneeTokyo Electron Limited
InventorHiraku Ishikawa
Life of this patent
Estimating the term…
Abstract
The present invention is an aftertreatment method further applied to an amorphous carbon film to which a treatment including heating is performed after the film has been formed on a substrate. The treatment of preventing oxidation of the amorphous carbon film is performed immediately after the treatment including heating.
Claims15
An aftertreatment method, which is further applied to an amorphous carbon film to which a treatment including heating has been applied after the film has been formed on a substrate, the aftertreatment method including:
- performing a treatment to prevent oxidation of the amorphous carbon film immediately after the treatment including heating.
A manufacturing method for a semiconductor device comprising the steps of:
- forming an amorphous carbon film on a substrate, the amorphous carbon film being an interlayer insulator;
- applying a treatment including heating to the amorphous carbon film;
- applying a silylation treatment by contacting a silylation agent to the amorphous carbon film immediately after performing the treatment including heating;
- removing the silylation agent by heating the amorphous carbon film, to which the silylation treatment has been applied;
- and
- forming a predetermined film on the amorphous carbon film immediately after removing the silylation agent.
3 more elements
Dependencies are inferred from the claim text.