Method for selective palsmochemical dry-etching of phosphosilicate glass deposited on surfaces of silicon wafers

Abstract

The invention relates to a method for the selective plasmochemical dry-etching of phosphosilicate glass ((SiO2)xP2O5)y) formed on surfaces of silicon wafers. In this respect, it is the object of the invention to provide a cost-effective, efficient, selective possibility which at least reduces manufacturing losses and with which phosphosilicate glass can be removed from silicon wafers. A procedure is followed in the invention that crystalline silicon wafers, whose surface is provided with phosphosilicate glass, are etched in a selective plasmochemical process. In this connection, a plasma formed using a plasma source and an etching gas are directed at atmospheric pressure to the phosphosilicate glass which can thus be removed.

Dependencies are inferred from the claim text.