Dry etching method
AssigneeTokyo Electron Limited
InventorsMasanobu HONDA, Shoichiro Matsuyama
Life of this patent
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Abstract
In a dry etching method, a silicon substrate is mounted on an electrode arranged in a processing chamber; a plasma is generated by discharging an etching gas in the processing chamber; a radio frequency power for attracting ions from the plasma is supplied to the electrode; and the silicon substrate is etched by the plasma. A pressure inside the processing chamber is set as 1 mTorr to 100 mTorr, and the etching is carried out while satisfying the following equation: yM≧2.84*10−3x+0.28, where yM is a power density of the radio frequency power per unit area of the electrode and x is the pressure inside the processing chamber.
Claims20
A dry etching method comprising:
- mounting a silicon substrate on an electrode arranged in a processing chamber;
- generating a plasma by discharging an etching gas in the processing chamber;
- supplying to the electrode a radio frequency power for attracting ions from the plasma;
- and
- etching the silicon substrate by the plasma,
- wherein a pressure inside the processing chamber is set as about 1 mTorr to 100 mTorr, and
- wherein the etching is carried out while satisfying the following equation:
- yS≧−1.7x+295,
- where yS is the absolute value of a self-bias voltage generated in the electrode and x is the pressure inside the processing chamber.
A dry etching method comprising:
- mounting a silicon substrate on an electrode arranged in a processing chamber;
- generating a plasma by discharging an etching gas in the processing chamber;
- supplying to the electrode a radio frequency power for attracting ions from the plasma;
- and
- etching the silicon substrate by the plasma,
- wherein a pressure inside the processing chamber is set as about 1 mTorr to 100 mTorr, and
- wherein the etching is carried out while satisfying the following equation:
- yM≧2.84*10−3x+0.28,
- where yM is a power density of the radio frequency power per unit area of the electrode and x is the pressure inside the processing chamber.
Dependencies are inferred from the claim text.