US 2010/0062604 A1Published application

Method for fabricating device pattern

AssigneeNanya Technology Corporation

InventorYu-Yao Chang

Life of this patent

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Abstract

A method for fabricating a device pattern includes the following steps. A first pattern having a first density is formed in a pre-determined region on a substrate. The first pattern includes a base portion along a first direction and at least two protruding portions along a second direction and connected to the base portion. A spacer is formed on a sidewall of each protruding portion. The spacers are free of connecting with the base portion, and the spacers between two adjacent protruding portions are free of connecting with each other, so as to form a gap between the two adjacent protruding portions. Then, a second pattern is formed on the substrate and located in the gap, such that a third pattern having a second density is defined in the pre-determined region by the first pattern and the second pattern.

Claims6

Dependent claims

A method for fabricating a device pattern, comprising:

forming a first pattern with a first density on a substrate, wherein the first pattern comprises a base portion along a first direction and at least two protruding portions along a second direction and each protruding portion connected to the base portion respectively, and the first direction intersects with the second direction;
forming a spacer on a sidewall of each protruding portion, wherein the spacers on the sidewall of each protruding portion are free of contacting the base portion, and the spacers between two adjacent protruding portions are free of contacting each other such that a gap is defined between the two adjacent protruding portions;
and
forming a second pattern on the substrate and located in the gap, such that a third pattern with a second density is defined by the first pattern and the second pattern.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 12/269,040Filed 12 Nov 2008
Priority: TW 971342285 Sep 2008
Published: 11 Mar 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10P 76/4085
Characterised by their sizes, orientations, dispositions, behaviours or shapes: characterised by the processes involved to create the masks
H10P 50/71
Etching of wafers, substrates or parts of devices: using masks for conductive or resistive materials
H10P 76/4088
Characterised by their sizes, orientations, dispositions, behaviours or shapes: processes for improving the resolution of the masks
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered