Method of fabricating non-volatile memory device

A method of fabricating a non-volatile memory device, the method comprising:

• forming a first hard mask layer over a substrate;
• forming a second hard mask layer over the first hard mask layer, the second hard mask layer having a higher etch selectivity than the first hard mask layer;
• etching the second hard mask layer, the first hard mask layer, and the substrate to form a plurality of isolation trenches extending in parallel to one another in a first direction;
• burying an insulation layer in the plurality of isolation trenches to form an isolation layer;
• forming a plurality of floating gate mask patterns extending in parallel to one another in a second direction intersecting with the first direction over a first resulting structure where the isolation layer is formed;
• etching the second hard mask layer and the first hard mask layer by using the floating gate mask patterns as a first etch barrier to form a plurality of island-shaped floating gate electrode trenches;
• and
• burying a conductive layer in the plurality of island-shaped floating gate electrode trenches to form a plurality of island-shaped floating gate electrodes.

A method of fabricating a non-volatile memory device having a recessed floating gate electrode, the method comprising:

• forming a hard mask layer over a substrate;
• forming a plurality of floating gate mask patterns over the hard mask layer;
• forming a plurality of floating gate electrode trenches by etching the hard mask layer by using the floating gate mask patterns as an etch barrier;
• recessing bottoms of the plurality of floating gate electrode trenches by a predetermined depth;
• forming a conductive layer for a floating gate electrode over a first resulting structure where the recessed bottoms of the plurality of of floating gate electrode trenches are formed;
• and
• planarizing the conductive layer for the floating gate electrode_until the hard mask layer is exposed to form floating gate electrodes.