Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions

A method of forming a semiconductor construction, comprising:

• implanting dopant within silicon;
• the silicon being monocrystalline, and the implanting forming damage regions of amorphous silicon;
• and
• simultaneously activating the dopant and repairing the damage regions by exposing the silicon to microwave radiation having a main spectrum wavelength peak at about 5.2 centimeters, a temperature of the silicon not exceeding about 500° C. during the exposure to the microwave radiation.

A method of forming integrated circuitry, comprising:

• providing first dopant within a semiconductor construction;
• utilizing a first pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to activate only some of the first dopant, while a temperature of the silicon-containing material remains at less than or equal to about 500° C.;
• after utilizing the first pulse of microwave radiation;
• providing second dopant within the semiconductor construction;
• and
• utilizing a second pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to complete activation of the first dopant and to fully activate the second dopant, while a temperature of the silicon-containing material remains at less than or equal to about 500° C.

A method of forming integrated circuitry, comprising the following steps in the listed order:

• providing dopant within a semiconductor material;
• utilizing a first pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to activate only some of the dopant, while a temperature of the silicon-containing material remains at less than or equal to about 500° C.;
• forming one or more materials over the semiconductor material;
• and
• utilizing a second pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to complete activation of the dopant, while a temperature of the silicon-containing material remains at less than or equal to about 500° C.

A method of forming a semiconductor construction, comprising:

• forming a memory element material over a semiconductor substrate;
• forming semiconductor material proximate the memory element material;
• doping a first region of the semiconductor material with p-type dopant;
• doping a second region of the semiconductor material with n-type dopant;
• and
• after forming the memory element material, utilizing microwave radiation having a frequency of about 5.8 gigahertz to activate the p-type and n-type dopants, the activation occurring while the memory element material and the semiconductor material remain at a temperature of less than or equal to about 500° C.