Pattern correcting method, method of manufacturing semiconductor device, and pattern correcting program
OwnerShimon MAEDAinventor
Life of this patent
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Abstract
A side of a correction target pattern is divided into a plurality of segments. A space between each of the divided segments or an imaginary segment extended from both the ends of the segment to outer sides and a side of an adjacent pattern adjacent to the segment is measured. An overlapping distance between each of the divided segments or the imaginary segment extended from both the ends of the segment to the outer sides and the side of the adjacent pattern is measured. A shift amount of the segment is corrected based on the overlapping distance.
Claims20
A pattern correcting method comprising:
- dividing a side of a correction target pattern into a plurality of segments;
- measuring a space between each of the divided segment or an imaginary segment extended from both ends of the segment to outer sides and a side of an adjacent pattern adjacent to the segment;
- measuring an overlapping distance between each of the divided segment or the imaginary segment extended from both the ends of the segment to the outer sides and the side of the adjacent pattern;
- extracting a shift amount of the segment corresponding to the measured space;
- and
- calculating a correction value for the segment by correcting the shift amount based on the overlapping distance.
A pattern correcting method comprising:
- dividing a side of a correction target pattern into a plurality of segments;
- measuring a space between each of the divided segment or an imaginary segment extended from both ends of the segment to outer sides and a side of an adjacent pattern adjacent to the segment;
- giving attributes to the divided segment;
- measuring an overlapping distance between each of the divided segment or the imaginary segment extended from both the ends of the segment to the outer sides and the side of the adjacent pattern;
- extracting a shift amount of the segment corresponding to the measured space;
- selecting a correction value calculation formula corresponding to each of the attributes;
- and
- calculating a correction value for the segment by correcting the shift amount on the correction value calculation formula based on the overlapping distance.
A pattern correcting method comprising:
- dividing a side of a correction target pattern into a plurality of segments;
- measuring a space between each of the divided segment or an imaginary segment extended from both ends of the segment to outer sides and a side of an adjacent pattern adjacent to the segment and line width of the segment;
- measuring an overlapping distance between each of the divided segment or the imaginary segment extended from both the ends of the segment to the outer sides and the side of the adjacent pattern;
- extracting a shift amount of the segment corresponding to the measured space and the measured line width;
- and
- calculating a correction value for the segment by correcting the shift amount based on the overlapping distance.
A pattern correcting method comprising:
- dividing a side of a correction target pattern into a plurality of segments;
- finding, in a range of a predetermined radiation angle from a point on the segment, a side of an adjacent pattern adjacent to each of the divided segment;
- measuring a space between the found side of the adjacent pattern and the segment;
- extracting a shift amount corresponding to the measured space;
- and
- calculating a correction value for the segment by correcting the shift amount based on a range of angle formed by segments crossing the found side of the adjacent pattern among segments extended in the range of the predetermined radiation angle from the point on the segment.
A method of manufacturing a semiconductor device comprising:
- dividing a side of a correction target pattern into a plurality of segments;
- measuring a space between each of the divided segment or an imaginary segment extended from both ends of the segment to outer sides and a side of an adjacent pattern adjacent to the segment;
- measuring an overlapping distance between each of the divided segment or the imaginary segment extended from both the ends of the segment to the outer sides and the side of the adjacent pattern;
- extracting a shift amount of the segment corresponding to the measured space;
- calculating a correction value for the segment by correcting the shift amount based on the overlapping distance;
- and
- transferring, using a mask formed based on a mask pattern corrected based on the correction value, the mask pattern onto a semiconductor substrate.
A pattern correcting program for correcting, based on an overlapping distance between a segment on a correction target pattern and a side of an adjacent pattern adjacent to the segment or an imaginary segment extended from both ends of the segment to outer sides, a shift amount determined depending on a space between the segment or the imaginary segment extended from both the ends of the segment to the outer sides and the side of the adjacent pattern to thereby calculate a correction value for the segment.
Dependencies are inferred from the claim text.