Negative tone double patterning method
AssigneeIntel Corporation
InventorsPaul Nyhus, Charles Wallace, Swaminathan Sivakumar
Life of this patent
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Abstract
A method of forming a pattern on a wafer is provided. The method includes applying a photoresist on the wafer and exposing the wafer to define a first pattern on the photoresist. The method also includes exposing the wafer to define a second pattern on the photoresist, wherein each of the first and second patterns comprises unexposed portions of the photoresist and developing the wafer to form the first and second patterns on the photoresist, wherein the first and second patterns are formed by removing the unexposed portions of the photoresist.
Claims25
A method of forming a pattern on a wafer, comprising:
- applying a photoresist on the wafer;
- exposing the wafer to define a first pattern on the photoresist;
- exposing the wafer to define a second pattern on the photoresist, wherein each of the first and second patterns comprises unexposed portions of the photoresist;
- developing the wafer to form the first and second patterns on the photoresist, wherein the first and second patterns are formed by removing the unexposed portions of the photoresist.
A method of forming a pattern on a wafer, comprising:
- applying a photoresist on the wafer;
- placing the wafer on a scanner chuck;
- exposing the wafer to define a first pattern on the photoresist;
- exposing the wafer to define a second pattern on the photoresist, wherein each of the first and second patterns comprises unexposed portions of the photoresist;
- removing the wafer from the scanner chuck;
- and
- developing the wafer to form the first and second patterns on the photoresist, wherein the first and second patterns are formed by removing the unexposed portions of the photoresist.
A method of forming isolated features on a wafer, comprising:
- applying a photoresist on the wafer;
- exposing the photoresist to define a first pattern on the photoresist;
- selectively plugging unexposed portions of the first pattern with the photoresist to define a second pattern;
- developing the wafer to remove unexposed portions of the photoresist defined by the first and second patterns.
25-30. (canceled)
Dependencies are inferred from the claim text.