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US 2010/0060349 A1Published application
Method of forming an integrated semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsSteven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
Life of this patent
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Abstract
In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
Claims20
An integrated semiconductor filter comprising:
- a first terminal;
- a second terminal;
- a third terminal;
- a first diode coupled between the first and third terminals;
- a second diode;
- a first zener diode coupled in series with the second diode wherein the series combination of the second diode and the first zener diode is coupled in parallel with the first diode and wherein the first diode, the second diode, and the first zener diode form a first capacitor having a first capacitance value;
- a third diode coupled between the second and third terminals;
- a fourth diode;
- a second zener diode coupled in series with the fourth diode wherein the series combination of the fourth diode and the second zener diode is coupled in parallel with the third diode and wherein the third diode, the fourth diode, and the second zener diode form a second capacitor having a second capacitance value;
- a fifth diode coupled in parallel with the third diode wherein the fifth diode forms a third capacitor having a third capacitance value and wherein the third diode, the fourth diode, the fifth diode, and the second zener diode form a first branch capacitor of the integrated semiconductor filter, the first branch capacitor having a fourth capacitance value that is approximately two and one-half to seven and one-half pico-farads at frequencies that are no greater than one Mhz;
- and
- an inductor coupled to at least the second terminal of the integrated semiconductor filter.
9 more elements
A method of forming an integrated semiconductor device comprising:
- providing a semiconductor substrate of a first conductivity type;
- forming a first doped region of a second conductivity type on a surface of the semiconductor substrate;
- forming a second doped region of the first conductivity type on a surface of the first doped region wherein the second doped region and the first doped region form a first diode;
- forming a third doped region of the second conductivity type on the surface of the semiconductor substrate and underlying the second doped region wherein the third doped region and a first portion of the semiconductor substrate form a first zener diode that is coupled in series with the first diode;
- forming a fourth doped region of the second conductivity type on the surface of the first doped region and spaced laterally apart from the second doped region wherein an interface between the semiconductor substrate and a first portion of the first doped region that underlies the fourth doped region forms a second diode that is coupled in parallel with the series combination of the first diode and the first zener diode;
- and
- forming a fifth doped region of the second conductivity type on the surface of the semiconductor substrate wherein the fifth doped region and a second portion of the semiconductor substrate form a third diode that is coupled in parallel with the second diode.
4 more elements
A method of forming an integrated semiconductor device comprising:
- providing a semiconductor substrate of a first conductivity type;
- forming a first doped region of a second conductivity type on a surface of the semiconductor substrate;
- forming a second doped region of the first conductivity type on a surface of the first doped region wherein the second doped region and the first doped region form a first diode;
- forming a third doped region of the second conductivity type on the surface of the semiconductor substrate and underlying the second doped region wherein the third doped region and a first portion of the semiconductor substrate form a first zener diode;
- forming a fourth doped region of the second conductivity type on the surface of the first doped region and spaced laterally apart from the second doped region wherein an interface between the semiconductor substrate and a first portion of the first doped region that underlies the fourth doped region forms a second diode;
- and
- forming a first isolation region extending from the surface of the first doped region into the semiconductor substrate wherein the first isolation region has a periphery that surrounds an interface between the semiconductor substrate and a second portion of the first doped region wherein the second portion of the first doped region does not underlie the first, second, third, or fourth doped regions and wherein the interface between the semiconductor substrate and the second portion of the first doped region forms a third diode that is in parallel with the second diode.
4 more elements
A method of forming an integrated semiconductor filter comprising:
- forming on a semiconductor substrate a first diode structure having first plurality of diodes and having a first terminal coupled to a first terminal of the integrated semiconductor filter including forming the first diode structure having a second terminal coupled to a second terminal of the integrated semiconductor filter wherein the first diode structure forms a first branch capacitance of the integrated semiconductor filter;
- forming on the semiconductor substrate a second diode structure having second plurality of diodes and having a first terminal coupled to a second terminal of the integrated semiconductor filter including forming the second diode structure having a second terminal coupled to a second terminal of the integrated semiconductor filter wherein the second diode structure forms a first branch capacitance of the integrated semiconductor filter and wherein the first diode structure and the second diode structure form a low frequency input capacitance for the integrated semiconductor filter that is between approximately five and fifteen pico-farads;
- and
- forming on the semiconductor substrate an indictor coupled to the first and second terminals of the integrated semiconductor filter.
1 more element
Dependencies are inferred from the claim text.