Mask ROM and method of fabricating the same
OwnerYong-Kyu Lee, Hee-Seog JEON +3inventors
InventorsYong-Kyu Lee, Hee-Seog JEON, Jeong-Uk HAN, Young-Ho Kim, Myung-Jo Chun
Life of this patent
Estimating the term…
Abstract
A mask read-only memory (ROM) includes a dielectric layer formed on a substrate and a plurality of first conductive lines formed on the dielectric layer. A plurality of diodes are formed in the first conductive lines, and a plurality of final vias are formed for a first set of the diodes each representing a first type of memory cell, with no final via being formed for a second set of diodes each representing a second type of memory cell. Each of a plurality of second conductive lines is formed over a column of the diodes.
Claims10
A mask read-only memory (ROM) comprising:
- a dielectric layer formed on a substrate;
- a plurality of first conductive lines formed on the dielectric layer;
- a plurality of diodes formed in the first conductive lines;
- a plurality of final vias formed for a first set of the diodes each representing a first type of memory cell, wherein no final via is formed for a second set of diodes each representing a second type of memory cell;
- and
- a plurality of second conductive lines, each formed over a column of the diodes.
Dependencies are inferred from the claim text.