Electronic device and method for manufacturing structure for electronic device
AssigneeFreescale Semiconductoer, Inc
InventorHideo OI
Life of this patent
Estimating the term…
Abstract
An electronic device including a shielded electronic element, and a method for manufacturing a shielding structure. An oxide film is formed on the surface of a silicon substrate having a [100] face. Part of the oxide film is removed to form a first window region. Silicon substrates are joined together to form an SOI substrate, which includes a buried mask having a second window region. Substrate thinning is then performed, and oxide films are formed on the two surfaces of the SOI substrate so that the first window region has a large area and includes the region above the buried second window region. Then, anisotropic etching is performed to form a cap that includes a step. Wire bonding for shielding is performed on the step.
Claims5
An electronic device including a structure for shielding an electronic element arranged on a substrate, the electronic device comprising:
- a first shield formed from the same material as the substrate and affixed to the substrate so as to cover the electronic element;
- a second shield arranged on the first shield;
- and
- an electrode electrically connected to the substrate, wherein the electrode is arranged on an upper surface of the first shield at a step that is not covered by the second shield.
A method for manufacturing a structure for shielding an electronic element arranged on a substrate, the method comprising:
- forming a surface mask on a surface of the substrate, wherein the substrate includes a buried mask layer having a first window region;
- forming a second window region, which overlaps the first window region, in the surface mask;
- and
- performing directive etching using the first and second window regions.
Dependencies are inferred from the claim text.