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US 2010/0059842 A1Published application
Image sensor and manufacturing method thereof
OwnerHa-Kyu Choiinventor
Life of this patent
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Abstract
A manufacturing method of an image sensor includes forming a photodiode region by implanting impurity ions in a semiconductor substrate, forming an interlayer dielectric over the semiconductor substrate having the photodiode region, forming a recess in the interlayer dielectric to expose the photodiode region, vapor-depositing a plurality of refractive layers over an inner surface of the recess, each refractive layer having a different refractive index, forming a color filter layer over the interlayer dielectric having the plurality of refractive layers, and forming a micro lens over the color filter layer.
Claims20
An apparatus comprising:
- a photodiode formed in a photodiode region formed in a semiconductor substrate;
- an interlayer dielectric formed over a portion of the photodiode and semiconductor substrate;
- and
- a plurality of refractive layers formed within the interlayer dielectric, each refractive layer having a different refractive index.
1 more element
A method comprising:
- forming a photodiode region by implanting impurity ions in a semiconductor substrate;
- forming an interlayer dielectric over the semiconductor substrate having the photodiode region;
- forming a recess in the interlayer dielectric to expose the photodiode region;
- vapor-depositing a plurality of refractive layers over an inner surface of the recess, each refractive layer having a different refractive index;
- forming a color filter layer over the interlayer dielectric having the plurality of refractive layers;
- and
- forming a micro lens over the color filter layer.
4 more elements
Dependencies are inferred from the claim text.