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US 2010/0059840 A1Published application
Cmos image sensor and method for manufacturing the same
OwnerYoung-Je Yuninventor
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Abstract
A Complementary Metal Oxide Semiconductor (CMOS) image sensor and a method for manufacturing the same are disclosed. The CMOS image sensor includes a photodiode formed in a semiconductor substrate, an inter dielectric layer formed over the semiconductor substrate in which the photodiode is formed, at least one metal line layer formed in the inter dielectric layer, an anti-reflection layer formed over the metal line layer in the inter dielectric layer, a color filter layer formed over the inter dielectric layer, and a micro-lens formed over the color filter layer.
Claims20
An apparatus comprising:
- a photodiode formed in a semiconductor substrate;
- an inter dielectric layer formed over the semiconductor substrate in which the photodiode is formed;
- at least one metal line layer formed in the inter dielectric layer;
- and
- an anti-reflection layer formed over the metal line layer in the inter dielectric layer.
2 more elements
A method comprising:
- forming a photodiode in a semiconductor substrate;
- forming a first dielectric layer over the semiconductor substrate in which the photodiode is formed;
- forming a first metal line layer over the first dielectric layer, the first metal line layer including a first metal line and a first anti-reflection layer stacked over the first metal line;
- and
- forming a second dielectric layer over the first metal line layer.
2 more elements
Dependencies are inferred from the claim text.