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US 2010/0059815 A1Published application
Semiconductor trench structure having a sealing plug and method
AssigneeSemiconductor Components Industries, LLC
InventorsGordon M. Grivna, Gary H. Loechelt, John Michael Parsey, JR., Mohammed Tanvir Quddus
Life of this patent
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Abstract
In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core.
Claims23
A semiconductor device comprising:
- a region of semiconductor material having a major surface;
- a trench extending from the major surface into the region of semiconductor material, wherein the trench has upper sidewall surfaces, lower sidewall surfaces, and a lower surface;
- a dielectric layer overlying the lower sidewall surfaces and the lower surface of the trench;
- and
- a single crystal semiconductor plug extending from the upper sidewall surfaces of the trench, wherein the single crystal semiconductor plug at least partially seals the trench, and wherein the single crystal semiconductor plug does not overlie major surfaces of the dielectric layer.
2 more elements
A semiconductor device comprising:
- a semiconductor region having a major surface;
- a trench formed in the semiconductor region extending from the major surface;
- a vertical charge compensation structure formed overlying surfaces of the trench, wherein the vertical charge compensation structure includes a first semiconductor layer of a first conductivity type adjoining the semiconductor region, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type adjoining the conduction layer;
- a dielectric layer formed overlying lower sidewall surfaces and the lower surface of the second semiconductor layer while leaving upper sidewall portions of the second semiconductor layer exposed;
- a single crystal semiconductor plug formed at an upper portion of the trench and extending from the upper sidewall portions of the second semiconductor layer;
- a trench control structure formed in the semiconductor region laterally spaced apart from the vertical charge compensation structure;
- a body region adjoining and between the trench control and the vertical charge compensation structure, wherein the body region has the second conductivity type;
- and
- a source region overlying a portion of the body region and adjoining the trench control structure.
6 more elements
A method for forming a semiconductor device comprising the steps of:
- providing a region of semiconductor material having a major surface;
- forming a trench extending from the major surface;
- forming a first dielectric layer overlying surfaces of the trench;
- forming a second dielectric layer overlying the first dielectric layer, wherein the first and second dielectric layers comprise different materials;
- removing portions of the first dielectric layer along upper portions of the trench to provide exposed sidewall portions while using the second dielectric layer has a masking layer;
- removing the second dielectric layer;
- and
- forming a semiconductor plug extending from the exposed sidewall portions.
5 more elements
Dependencies are inferred from the claim text.