Light reflecting cmos image sensor

A method of producing an image sensor, comprising at least the following steps of:

• producing doped regions of CMOS-type photodiodes and transistors in a layer containing at least one semiconductor,
• producing electrical interconnect layers which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors in a layer containing at least one dielectric arranged against a first face of the semiconductor-based layer, which is opposite a second face of the semiconductor-based layer through which the light received by the sensor from the exterior is intended to enter,
• and further comprising the production of light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor, towards the photodiodes,
• the semiconductor layer having a thickness of between approximately 1 μm and 1.5 μm.