Method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSung Hyun KIM
Life of this patent
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Abstract
The present invention relates to a method for manufacturing a semiconductor device, and provides to reduce a contact resistance of a landing plug by forming the landing plug in such a manner that a polysilicon layer is deposited only on the surface of a landing plug contact hole, and a metal layer is buried in the rest of the landing plug contact hole in the process of forming a storage node contact or a bit line contact.
Claims14
A method for manufacturing a semiconductor device, the method comprising:
- forming a landing plug contact hole over a substrate, the landing plug contact hole exposing the substrate;
- forming a first conductive layer on a sidewall of the landing plug contact hole, the first conductive layer being formed conformal to the landing plug contact hole;
- forming a storage node contact hole having a bottom opening joined to a top opening of the landing plug contact hole;
- and
- depositing a second conductive layer within the storage node contact hole and the landing plug contact hole to form a storage node contact plug and a landing plug, the second conductive layer having a higher conductivity than the first conductive layer.
The method according to claim 6, wherein the second conductive layer fills in the landing plug contact hole and the storage node contact hole.
A method for manufacturing a semiconductor device, the method comprising:
- forming a landing plug contact hole over a substrate;
- forming a first conductive layer on the bottom of the landing plug contact hole;
- and
- forming a second conductive layer on the first conductive layer and sidewalls of the landing plug contact hole, the second conductive layer having higher conductivity than the first conductive layer.
A semiconductor device comprising:
- a source/drain region formed on a substrate;
- a landing plug contact hole exposing the source/drain region;
- a storage node contact hole having a bottom opening joined to a top opening of the landing plug contact hole;
- a landing plug defined within the landing plug contact hole, the landing plug having a first conductive layer and a second conductive layer;
- and
- a storage node contact plug defined within the storage node contact hole, the storage node contact plug having the second conductive layer but not the first conductive layer,
- wherein the second conductive layer has a higher conductivity than the first conductive layer.
Dependencies are inferred from the claim text.