Schottky barrier diode

Abstract

A Schottky barrier diode includes a GaN freestanding substrate having a front surface, a GaN epitaxial layer deposited on the front surface, and an insulation layer deposited on the GaN epitaxial layer at a front surface and having an opening. Furthermore, the Schottky barrier diode also includes an electrode. The electrode is configured by a Schottky electrode provided in the opening in contact with the GaN epitaxial layer, and a field plate electrode connected to the Schottky electrode and also overlapping the insulation layer. The GaN freestanding substrate has a dislocation density of at most 1×108 cm−2.

Dependencies are inferred from the claim text.