Improved oxide-based field-effect transistors

Abstract

A field-effect transistor includes a source region; a drain region; a semiconductor layer disposed between the source and drain regions; a gate region; and a dielectric region disposed between the semiconductor layer and the gate region. The semiconductor layer comprises a titanium dioxide film. The transistor may be light sending, gas- or bio-sensing, or used in a visual display or in electronic circuits. The transistor is formed by forming a dielectric layer adjacent a gate region; forming a source region and a drain region; and forming a semiconductor layer on the dielectric layer, the semiconductor layer comprising titanium dioxide. The titanium dioxide semiconductor layer may be deposited by spray pyrolysis, or alternatively mesoporous TiO2 films of nanocrystalline morphology may be formed by spin coating, doctor-blading or screen-printing techniques.

Dependencies are inferred from the claim text.