Thin-film transistor and process for its fabrication
AssigneeCanon Kabushiki Kaisha
InventorsKenji Takahashi, Ryo Hayashi, Masafumi Sano
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Abstract
A bottom gate type thin-film transistor constituted of at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode. At an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less.
Claims7
A bottom gate type thin-film transistor comprising at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, wherein;
- at an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less.
A process for fabricating a bottom gate type thin-film transistor, comprising at least a first step of forming a gate electrode on a substrate, a second step of forming a gate insulating layer on the gate electrode, a third step of forming a semiconductor layer on the gate insulating layer and a fourth step of forming a source electrode and a drain electrode on the semiconductor layer, wherein;
- in the first step, the gate electrode formed on the substrate is an amorphous transparent electrode, and the amorphous transparent electrode is crystallized by being subjected to heat treatment later than the second step.
Dependencies are inferred from the claim text.