Semiconductor light emitting device and wafer

A semiconductor light emitting device comprising:

• a first layer made of at least one of n-type GaN and n-type AlGaN;
• a second layer made of Mg-containing p-type AlGaN;
• and
• a light emitting section provided between the first layer and the second layer and including
• a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and
• a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN,
• each of the barrier layers sandwiched between the well layers including
• a third portion provided on the first layer side and made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and
• a fourth portion provided on the second layer side and made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), a Si concentration in the fourth portion being higher than Si concentration in the third portion.

A wafer comprising:

• a first layer made of at least one of n-type GaN and n-type AlGaN;
• a second layer made of Mg-containing p-type AlGaN;
• and
• a light emitting section provided between the first layer and the second layer,
• the light emitting section including
• a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and
• a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN,
• the plurality of barrier layers having a nearest barrier layer and a far barrier layer, the nearest barrier layer being nearest to the second layer among the plurality of barrier layers,
• the nearest barrier layer including
• a first portion made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and
• a second portion provided between the first portion and the second layer and made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), a Si concentration in the second portion being lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.

A wafer comprising:

• a first layer made of at least one of n-type GaN and n-type AlGaN;
• a second layer made of Mg-containing p-type AlGaN;
• and
• a light emitting section provided between the first layer and the second layer and including
• a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and
• a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN,
• each of the barrier layers sandwiched between the well layers including
• a third portion provided on the first layer side and made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and
• a fourth portion provided on the second layer side and made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), a Si concentration in the fourth portion being higher than Si concentration in the third portion.