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US 2010/0059662 A1Published application
Cmos imager and apparatus with selectively silicided gates
OwnerHoward E. Rhodesinventor
Life of this patent
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Abstract
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
Claims20
1-86. (canceled)
An apparatus, comprising:
- a pixel array, each pixel of the array comprising at least one silicided transistor gate, at least one transistor source/drain that is not silicided, and at least one photosensor that is not silicided to prevent light blockage;
- a readout circuit configured to provide correlated sampling of each pixel of the array;
- and
- an analog-to-digital converter coupled to receive signals from pixels of the array.
1 more element
Dependencies are inferred from the claim text.