Sputtering Target and Manufacturing Method Thereof
AssigneeNippon Mining & Metals Co., Ltd.
InventorAtsushi Hukushima
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Abstract
A sputtering target manufactured by die forging is provided. It is characterized in that an average crystal grain size D at a portion where an average crystal grain size is the largest and an average crystal grain size d at a portion where an average crystal grain size is the smallest are related as 1.0<D/d<2.0. Further provided is a method capable of constantly manufacturing a sputtering target excellent in characteristics by improving and elaborating forging and heat treatment processes to render a crystal size fine and uniform, and a sputtering target excellent in quality obtained by this method.
Claims16
A method of manufacturing a sputtering target, comprising the steps of:
- performing hot or cold kneading and straightening annealing to an ingot or billet material;
- adjusting crystal grains of the material by performing cold preforming and recrystallization annealing;
- thereafter performing die forging;
- and
- after said die forging step, performing straightening or recrystallization annealing.
Dependencies are inferred from the claim text.