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AssigneeThe UAB Research Foundation
InventorsSergey B. Mirov, Vladimir V. Fedorov, Dmitri Martyshkin
Estimating the term…
Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
A semiconductor gain medium for electrically pumped broadly tunable mid-infrared laser comprising:
A method for producing DQCH semiconductor gain medium comprising:
In a middle infra red laser, the improvement comprising, an electrically excitable doped quantum confined host material selected from crystals doped with transition metal ions, with characteristic spatial dimension of the confinement enabling the overlap of the discrete levels of the host and transition metal ions and efficient energy transfer from the separated host carriers to the transition metal ions and with strong luminescence in a widely tunable mid-IR range.
Dependencies are inferred from the claim text.