Atomic layer deposition using metal amidinates
AssigneePresident and Fellows of Harvard
InventorsRoy G. Gordon, Booyong S. Lim
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AssigneePresident and Fellows of Harvard
InventorsRoy G. Gordon, Booyong S. Lim
Estimating the term…
Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates b the reaction of alternating doses of cobalt(II) bis(N,N′-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
A compound represented by the general formula
A compound represented by the general formula
A process for depositing a material comprising a metal, M, the process comprising exposing a vapor of a first reagent to a substrate, wherein the reagent comprises a compound represented by the general formula
Dependencies are inferred from the claim text.