Pad design with buffers for STT-MRAM or other short pulse signal transmission
AssigneeQUALCOMM Incorporated
InventorsWilliam Xia, Seung H. Kang
Life of this patent
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Abstract
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell array is provided. The STT-MRAM array includes a STT-MRAM bit cell and an input net coupled to the STT-MRAM bit cell. The STT-MRAM array includes a pulse signal input pad and a buffer coupled between the pulse signal input pad and the input net. In an aspect, the input net is one of a bit line, a word line, and a source line.
Claims43
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array comprising:
- a STT-MRAM bit cell;
- an input net coupled to the STT-MRAM bit cell;
- a pulse signal input pad;
- and
- a buffer circuit coupled between the pulse signal input pad and the input net of the STT-MRAM bit cell.
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array comprising:
- a plurality of STT-MRAM bit cells, each coupled to one of a plurality of input nets;
- a pulse signal input pad;
- and
- a buffer circuit coupled between the pulse signal input pad and one of the plurality of input nets.
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array comprising:
- a STT-MRAM bit cell;
- an input net coupled to the STT-MRAM bit cell;
- and
- a buffer circuit coupled to the input net,
- wherein the buffer circuit is configured to receive a pulse signal from a pad and output a buffer signal to the input net.
A method of forming a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, the method comprising:
- forming a STT-MRAM bit cell;
- forming an input net coupled to the STT-MRAM bit cell;
- forming a pulse signal input pad;
- and
- forming a buffer circuit coupled between the pulse signal input pad and the input net.
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array comprising:
- memory cell means for storing a polarized magnetic field;
- pulse signal input means for transmitting a first pulse signal;
- input net means for transmitting a second pulse signal to the memory cell means;
- and
- buffering means coupled between the pulse signal input means and the input net means for receiving and buffering the first pulse signal from the pulse signal input means and outputting the second pulse signal to the input net means.
A method of forming a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, the method comprising:
- step for forming a STT-MRAM bit cell;
- step for forming an input net coupled to the STT-MRAM bit cell;
- step for forming a pulse signal input pad;
- and
- step for forming a buffer circuit coupled between the pulse signal input pad and the input net.
Dependencies are inferred from the claim text.