Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods

A memory cell construction comprising:

• a substrate;
• a bitline over the substrate;
• dielectric material over the bitline;
• a metal material over the dielectric material;
• an oxide material over the metal material;
• a conductive material over the oxide material;
• a wordline over the conductive material;
• and
• wherein a resistance of the memory cell is susceptible to modification by a current conducted from the wordline through the conductive material, the oxide material, the metal material, and the dielectric material to the bitline.

A memory cell construction comprising:

• a substrate;
• a bitline over the substrate;
• dielectric material over the bitline;
• a metal material over the dielectric material;
• a magnetoresistive material over the metal material;
• a wordline over the magnetoresistive material;
• and
• wherein the memory cell has a resistance that is configurable via a current conducted from the wordline through the magnetoresistive material, the metal material, and the dielectric material to the bitline.

A memory cell programming method comprising:

• providing a memory cell comprising:
• a memory element comprising a magnetoresistive material, the memory element being in a first resistive state and having a first resistance;
• and
• a diode comprising metal and a dielectric material, the diode and the memory element being connected together in series;
• and
• conducting a current through the memory element and the diode effective to reconfigure the memory element to be in a second resistive state different than the first resistive state and have a second resistance different than the first resistance.