Porous valve metal thin film, method for production thereof and thin film capacitor

2:

• A porous valve metal thin film according to claim 1, wherein a size of a pore diameter in the porous thin film is within a range of 10 nm to 1 μm.

3:

• A porous valve metal thin film according to claim 1, wherein a particle diameter of the valve metal is within a range of 10 nm to 1 μm.

4:

• A porous valve metal thin film according to claim 1, wherein the valve metal is any one of Nb, Ta, Nb alloy, and Ta alloy.

6:

• A method according to claim 5, where the forming and subjecting steps are performed at the same time.

8:

• A method for production of a porous valve metal thin film according to claim 7, wherein the hetero-phase component is MgO and/or CaO.

9:

• A method for production of a porous valve metal thin film according to claim 7, wherein the subjecting step comprises
• subjecting the thin film to a heat treatment in a vacuum at a temperature of 200° C. to 1030° C. inclusive, and the hetero-phase component is the at least one metal.

10:

• A method for production of a porous valve metal thin film according to claim 7, wherein the subjecting step comprises
• subjecting the thin film to a heat treatment in an argon atmosphere at a temperature of 200° C. to 1060° C. inclusive, and the hetero-phase component is the at least one metal.

11:

• A method for production of a porous valve metal thin film according to claim 7, wherein the hetero-phase component is Cu and/or Ag.

12:

• A method for production of a porous valve metal thin film according to claim 7, wherein the subjecting step comprises
• subjecting the thin film to a heat treatment in a vacuum at a temperature of 200° C. to 600° C. inclusive, and the hetero-phase component is Mg and/or Ca.

13:

• A method for production of a porous valve metal thin film according to claim 7, wherein the subjecting step comprises
• subjecting the thin film to a heat treatment in an argon atmosphere at a temperature of 200° C. to 630° C. inclusive, and the hetero-phase component is Mg and/or Ca.

14:

• A method for production of a porous valve metal thin film comprising;
• forming a thin film made of a valve metal and a hetero-phase component, in which a particle diameter of the valve metal and a particle diameter of the hetero-phase component are both within a range of 1 nm to 1 μm, on a substrate heated to 100° C. to 400° C., and then removing the hetero-phase component.

15:

• A method for production of a porous valve metal thin film according to claim 14, wherein the hetero-phase component is Mg and/or Ca.

16:

• A method for production of a porous valve metal thin film according to claim 14, wherein the hetero-phase component is Cu and/or Ag.

17:

• A method for production of a porous valve metal thin film according to claim 5, wherein an amount to be added of the hetero-phase component is from 30 to 70% by volume.

18:

• A method for production of a porous valve metal thin film according to claim 5, wherein the thin film is formed on a valve metal smooth film or on one side or both sides of a metal foil.

19:

• A method for production of a porous valve metal thin film according to claim 5, wherein the thin film is formed by using a sputtering method or a vacuum deposition method.

20:

• A method for production of a porous valve metal thin film according to claim 5, wherein the valve metal is any one of Nb, Ta, Nb alloy, and Ta alloy.

21:

• A capacitor anode material comprising a metal foil, and a porous valve metal thin film according to claim 1, and the porous valve metal thin film formed on one side or opposite sides of the metal foil.

22:

• A capacitor anode material according to claim 21, wherein the metal foil comprises any one of Nb, Ta, Nb alloy, and Ta alloy.

23:

• A capacitor anode material according to claim 21, wherein the metal foil comprises Cu.

24:

• A capacitor anode material comprising;
• an insulating substrate, a valve metal smooth film formed on the insulating substrate, and a porous valve metal thin film according to claim 1, formed on the valve metal smooth film.

25:

• A capacitor anode material according to claim 24, wherein the insulating substrate is made of any one of alumina, quartz, and surface thermally-oxidized silicon.

26:

• A capacitor anode material according to claim 24, wherein the insulating substrate is made of any one of a polyimide resin substrate, a polysulphone resin substrate, a polyether imide resin substrate, and a polyether ketone resin substrate.

27:

• A capacitor thin film anode comprising;
• a porous valve metal thin film according to claim 1, and an oxide film of the valve metal formed on a surface of the porous valve metal thin film.

28:

• A capacitor thin film anode comprising;
• a porous valve metal thin film made of a capacitor anode material according to claim 21, and an oxide film of the valve metal formed on a surface of the porous valve metal thin film.

29:

• A thin film capacitor comprising a capacitor thin film anode according to claim 27 as a capacitor anode.

30:

• A thin film capacitor comprising;
• a capacitor thin film anode according to claim 27 an electrically conductive layer formed on a surface oxide film of the capacitor anode, and a cathode formed on the electrically conductive layer.

31:

• A thin film capacitor according to claim 30, wherein the electrically conductive layer comprises a solid electrolyte.

32:

• A thin film capacitor according to claim 31, wherein the solid electrolyte is manganese dioxide or an electroconductive polymer.