US 2009/0289341 A1 · SEMICONDUCTOR DEVICE

Abstract

An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected.

Claims27

Dependent claims

A semiconductor device comprising:

a first insulator having a first surface and a second surface opposite to the first surface;
a second insulator having a third surface and a fourth surface opposite to the third surface so that the first surface and the third surface face each other;
a semiconductor integrated circuit;
an antenna,
wherein the semiconductor integrated circuit and the antenna are provided between the first insulator and the second insulator;
a first conductive layer provided on the second surface of the first insulator;
and
a second conductive layer provided on the fourth surface of the second insulator,
wherein the first conductive layer and the second conductive layer are electrically connected.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims27