US 2009/0289300 A1Published application

Semiconductor device and method for producing the same

AssigneePanasonic Corporation

InventorsYuichiro SASAKI, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada, Bunji Mizuno

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Abstract

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Claims28

Dependent claims

A semiconductor device comprising:

a first fin-shaped semiconductor region formed on a substrate, the first fin-shaped semiconductor region having first-conductivity-type impurity region formed therein;
a second fin-shaped semiconductor region formed on the substrate, the second fin-shaped semiconductor region having second-conductivity-type impurity region formed therein;
a first gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first fin-shaped semiconductor region, the upper corner of the first fin-shaped semiconductor region having a radius of curvature of r1 under the first gate insulating film different from a radius of curvature of r1′ outside the first gate insulating film;
and
a second gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the second fin-shaped semiconductor region, the upper corner of the second fin-shaped semiconductor region having a radius of curvature of r2 under the second gate insulating film different from a radius of curvature of r2′ outside the second gate insulating film, wherein
r1′ is greater than r1 and less than or equal to 2×r1, and
r2′ is greater than r2 and less than or equal to 2×r2.

4 more elements

A method for producing a semiconductor device, comprising the steps of:

(a) forming a first fin-shaped semiconductor region on a substrate;
(b) forming a second fin-shaped semiconductor regions on the substrate;
(c) implanting the first fin-shaped semiconductor region with a first-conductivity-type impurity by a plasma doping method;
and
(d) implanting the second fin-shaped semiconductor region with a second-conductivity-type impurity by a plasma doping method, wherein
the first-conductivity-type impurity is a p-type impurity or an n-type impurity,
the second-conductivity-type impurity is an impurity of a conductivity type different from that of the first-conductivity-type impurity,
in a case where a mass of the second-conductivity-type impurity is greater than that of the first-conductivity-type impurity, a pressure during plasma doping in the step (d) is set to be less than or equal to that in the step (c), and
in a case where the mass of the first-conductivity-type impurity is greater than that of the second-conductivity-type impurity, the pressure during plasma doping in the step (c) is set to be less than or equal to that in the step (d).

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/512,617Filed 30 Jul 2009
Priority: JP 2007-19586027 Jul 2007
Published: 26 Nov 2009
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 30/0241
Of fin field-effect transistors [FinFET]: doping of vertical sidewalls, e.g. using tilted or multi-angled implants
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/6213
Having fin-shaped semiconductor bodies having non-rectangular cross-sections: having rounded corners
H10D
Inorganic electric semiconductor devices

Family

Application12/193,861Continuation in part · filed 19 Aug 2008
Application12/512,617Continuation in part
Application12/193,861Continuation
US 2009/0026540 A1Published application
US 8,004,045 B2Related patent
US 8,063,437 B2Related patent
US 2009/0289300 A1This patent

From the US filing history. Foreign family members aren’t listed.