Semiconductor Device and Method of Fabricating the same

A semiconductor device, comprising:

• gate patterns each comprising a tunnel dielectric layer, a conductive layer for a floating gate, a dielectric layer, a conductive layer for a control gate, and a gate electrode layer sequentially stacked over a semiconductor substrate, the gate electrode layer defining sidewalls;
• a first passivation layer formed on the sidewalls of the gate electrode layer;
• and
• a second passivation layer formed on a surface of the first passivation layer and over the gate patterns.

A method of fabricating a semiconductor device, comprising:

• sequentially stacking a tunnel dielectric layer, a first conductive layer, a dielectric layer, a second conductive layer, and a gate electrode layer over a semiconductor substrate, the gate electrode layer defining sidewalls;
• patterning the gate electrode layer and the second conductive layer;
• forming a first passivation layer on the sidewalls of the gate electrode layer;
• forming gate patterns by etching the dielectric layer, the first conductive layer, and the tunnel dielectric layer, which have been exposed;
• and
• forming a second passivation layer on the entire surface along a surface of the gate patterns including the first passivation layer.

A method of fabricating a semiconductor device, comprising:

• sequentially stacking a tunnel dielectric layer, a first conductive layer, a dielectric layer, a second conductive layer, and a gate electrode layer over a semiconductor substrate, the gate electrode layer defining sidewalls;
• patterning the gate electrode layer and the second conductive layer;
• forming a first passivation layer on the sidewalls of the gate electrode layer;
• forming a second passivation layer on the entire surface including the first passivation layer;
• and
• forming gate patterns by etching the second passivation layer formed over the dielectric layer, the dielectric layer, the first conductive layer, and the tunnel dielectric layer.

A method of fabricating a semiconductor device, comprising:

• sequentially stacking a tunnel dielectric layer, a first conductive layer, a dielectric layer, a second conductive layer, and a gate electrode layer over a semiconductor substrate, the gate electrode layer defining sidewalls;
• patterning the gate electrode layer and the second conductive layer;
• forming a first passivation layer on sidewalls of the gate electrode layer;
• forming gate patterns by etching the dielectric layer, the first conductive layer, and the tunnel dielectric layer, which have been exposed;
• and
• forming second and third passivation layers on the entire surface along a surface of the gate patterns including the first passivation layer.