Wafer For Backside Illumination Type Solid Imaging Device, Production Method Thereof And Backside Illumination Solid Imaging Device
AssigneeSumco Corporation
InventorsKazunari Kurita, Shuichi Omote
Life of this patent
Estimating the term…
Abstract
A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer.
Claims13
A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its a back surface side, characterized in that said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer.
A method for producing a wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, characterized in that a silicon substrate is formed by bonding a wafer for support substrate made of C-containing p-type semiconductor material to a given wafer for active layer through an insulating film and then thinning the wafer for active layer.
Dependencies are inferred from the claim text.