Solid state imaging device and method for manufacturing the same

A method for manufacturing a solid state imaging device including a transfer transistor for transferring signal charges generated by photoelectric conversion to a floating diffusion layer, a reset transistor for resetting a potential of the floating diffusion layer, and an amplifying transistor for outputting a signal corresponding to the potential of the floating diffusion layer, the method comprising:

• (a) forming a first conductivity type semiconductor region serving as a well region of the amplifying transistor on a substrate;
• and
• (b) implanting a second conductivity type impurity to a surface portion of the first conductivity type semiconductor region to form a low concentration impurity region having an impurity concentration lower than that of the first conductivity type semiconductor region and serving as a channel region of the amplifying transistor.