Junction barrier schottky diodes with current surge capability

A method of forming a Schottky diode, comprising:

• forming a plurality of junction barrier Schottky (JBS) regions at a surface of a silicon carbide drift region having a first conductivity type, the plurality of JBS regions having a second conductivity type opposite the first conductivity type and having a first spacing between adjacent ones of the JBS regions;
• forming a surge protection region at the surface of the drift region adjacent the Schottky contact, the surge protection region comprising a plurality of surge protection subregions having the second conductivity type and each of the surge protection subregions having a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing between adjacent ones of the JBS regions;
• and
• forming a Schottky contact on the drift region.

A Schottky diode, comprising:

• a silicon carbide drift region having a first conductivity type;
• a Schottky contact on the drift region;
• a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact, the plurality of JBS regions having a second conductivity type opposite the first conductivity type and having a first spacing between adjacent ones of the JBS regions;
• and
• a plurality of surge protection subregions having the second conductivity type and each of the surge protection subregions having a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing.