Short bridge phase change memory cells and method of making

A phase change memory unit comprising:

• a first electrode proximate a substrate, the first electrode comprising:
• a first layer comprising a first conductive material and having a first end and an opposite second end;
• and
• a second layer comprising a second conductive material and having a first end and an opposite second end, the second end non-orthogonal to the substrate;
• a second electrode proximate the substrate spaced from the first electrode, the second electrode comprising the second conductive material and having a first end and a second end, the second end non-orthogonal to the substrate;
• a gap of no more than about 100 nm between the first electrode and the second electrode, the gap defined by the second end of the first layer of the first electrode and the second end of the second electrode;
• a bridge comprising a phase change material contacting the first electrode, the second electrode, and present within the gap;
• and
• an insulative material adjacent at least a portion of the phase change material.

A method of making a phase change memory unit comprising:

• providing a first conductive material on a first region of a substrate;
• shadow depositing a second conductive material on the first region and on a second region of the substrate, leaving a gap between the first region and the second region;
• the first and second conductive materials in the first region forming a first electrode and the second conductive material in the second region forming a second electrode;
• applying a phase change material over at least a portion of the first electrode, at least a portion of the second electrode, and the gap therebetween;
• and
• applying an insulative material over the phase change material.