Method of fabricating light emitting device

A method of fabricating a light emitting device comprising:

• a light emitting device wafer fabricating step of fabricating a light emitting device wafer having a light emitting layer section based on a double heterostructure in which a first-conductivity-type cladding layer, an active layer and an second-conductivity-type cladding layer, each of which being composed of a compound having a composition allowing lattice matching with GaAs, out of compound expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and a GaP light extraction layer disposed, having a main surface, on a side not faced to the active layer, of the first-conductivity-type cladding layer of the light emitting layer section as a first main surface, so that on the first main surface of the light emitting layer section a {100} surface appears on the first main surface of itself;
• a surface roughening step of forming surface roughening projections by etching the first main surface of the GaP light extraction layer, using an etching solution for surface roughening;
• and
• a dicing step of dicing the light emitting device wafer to light emitting device chips, wherein
• on the light emitting device wafer fabricating step, the GaP light extraction layer is formed to have a principal crystal axis thereof off-angled in a degree range of 1° to 25°, both ends inclusive, from <100> direction, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface thereof,
• the etching solution for surface roughening at the surface roughening step contains:
• acetic acid (on CH3COOH basis):
• 40% by mass or more and 75% by mass or less;
• hydrofluoric acid (on HF basis):
• 2% by mass or more and 8% by mass or less;
• nitric acid (on HNO3 basis):
• 4.5% by mass or more and 16% by mass or less;
• and
• iodine (on I2 basis) :
• 0.6% by mass or more and 1.5% by mass or less,
• and has a water content of 2% by mass or more and 25% by mass or less.